BFR183(2001) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

MFG CO.

BFR183
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFR183

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

IC = 25 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

IC = 5 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

fT

6

8

- GHz

Ccb

-

0.4 0.6 pF

Cce

-

0.2

-

Ceb

-

1

-

F

dB

-

1.2

-

-

2

-

Power gain, maximum available 1)

IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

Gma

f = 1.8 GHz

- 16.5 -

-

11

-

Transducer gain

IC = 15 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

-

14

-

-

8.5

-

1Gma = |S21 / S12| (k-(k2-1)1/2)

3

Aug-09-2001

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