18N60
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
18
A
Pulsed Drain Current
IDM
45
A
Avalanche Current
IAR
18
A
Avalanche Energy
Single Pulsed
EAS
Repetitive
EAR
1000
mJ
30
Peak Diode Recovery dv/dt
dv/dt
10
V/ns
Power Dissipation
PD
360
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
Junction-to-Case
PARAMETER
SYMBOL
MIN
TYP
θJC
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
MAX
0.35
UNIT
℃/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Zero Gate Voltage Drain Current
IDSS
VDS=VDSS, VGS=0V
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON) VGS=10V, ID=0.5ID25 (Note 1)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VGS=10V, VDS=0.5VDSS,
ID=ID25, RG=5Ω (External)
Turn-OFF Fall-Time
tF
Total Gate Charge
Gate Source Charge
Gate Drain Charge
QG
QGS
QGD
VGS=10V, VDS=0.5VDSS,
ID=0.5ID25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IF=IS ,VGS=0V (Note 1)
Maximum Continuous Drain-Source
Diode Forward Current
IS
VGS=0V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Repetitive
Reverse Recovery Time
Reverse Recovery Charge
tRR
VGS=0V, di/dt=100A/s,
QRR
IS=18A, VR=100V
Note 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
MIN TYP MAX UNIT
600
V
25 µA
±100 nA
2.0
4.0 V
400 mΩ
2500
pF
280
pF
23
pF
21
ns
22
ns
62
ns
22
ns
50
nC
15
nC
18
nC
1.5 V
18 A
54 A
200 ns
0.8
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-221.Aa