C4582 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

MFG CO.

C4582

Silicon NPN Power Transistor

New Jersey Semiconductor 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 1.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 7.5A; IB= 1.5A

ICBO

Collector Cutoff Current

At rated Voltage

ICEO

Collector Cutoff Current

At rated Voltage

IEBO

Emitter Cutoff Current

At rated Voltage

hFE-1

DC Current Gain

IC= 7.5A; VCE= 5V

hFE-2

DC Current Gain

IC= 1mA; VCE= 5V

fT

Current-Gain—Bandwidth Product

IC= 1.5A; VCE= 10V

2SC4582

MIN TYP. MAX UNIT

450

V

1.0

V

1.5

V

100 μA

100 μA

100 μA

10

5

20

MHz

SPTECH website：www.superic-tech.com

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