2N7002KDU
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
BVDSS
IDSS
IGSSF
VGS=0V, ID=10μA
VDS=60V, VGS=0V
VGS=20V, VDS=0V
Gate-Body Leakage, Reverse
Gate Threshold Voltage
Drain-Source ON Resistance
IGSSR
Vth
RDS(ON)
VGS=-20V, VDS=0V
VDS=VGS, ID=250μA
VGS=10V, ID=300mA
VGS=4.5V, ID=250mA
Forward Transconductance
gFS
VDS=10V, ID=300mA
Drain-Source Diode Forward Voltage
Dynamic Note 3)
VSD
VGS=0V, IS=300mA
Input Capacitance
Reverse Transfer Capacitance
Ciss
Crss
VDS=25V, VGS=0V, f=1MHz
Output Capacitance
Coss
Switching Time
Turn-On Time
Turn-Off Time
ton
VDD=30V, ID=300mA, VGS=10V
toff
Note 3) Pulse Test : Pulse Width≦80㎲, Duty Cycle≦1%
MIN. TYP. MAX. UNIT.
60
-
-
V
-
-
1
μA
-
-
10
μA
-
-
-10
μA
1.0
-
2.0
V
-
1.2
1.5
Ω
-
1.45 1.9
250
-
-
mS
-
0.9
1.2
V
-
20
-
-
4
-
pF
-
8
-
-
9
-
ns
-
43
-
SWITCHING TIME TEST CIRCUIT
VGS
VDD
RL
VIN
D
VOUT
G
S
td(on)
ton
tr
90%
td(off)
toff
tf
90%
OUTPUT VOUT 10%
INVERTED
90%
50%
50%
INPUT VIN 10%
PULSE WIDTH
2013. 7. 19
Revision No : 1
2/4