1N60A View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

1N60A

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

1N60A

·FEATURES

·Drain Current ID= 1.0A@ TC=25℃

·Drain Source Voltage-

: VDSS= 600V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 12Ω(Max)

·Fast Switching

·APPLICATIONS

·Switching applications in power supplies

·Motor controls,high efficient DC to DC converters

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

VGS

ID

IDM

PD

Tj

Tstg

Drain-Source Voltage

600

V

Gate-Source Voltage-Continuous

±30

V

Drain Current-Continuous

1.0

A

Drain Current-Single Plused

5

A

Total Dissipation @TC=25℃

34

W

Max. Operating Junction Temperature

150

℃

Storage Temperature

-55~150 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

3.13 ℃/W

isc website：www.iscsemi.cn

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