STB11NM60FD-1 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

STB11NM60FD-1

N-Channel MOSFET Transistor

Inchange Semiconductor 

Isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

STB11NM60FD-1

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA

600

V

VGS(th)

Gate Threshold Voltage

VDS=±30V; ID=0.25mA

3

5

V

RDS(on) Drain-Source On-Resistance

VGS= 10V; ID=5.5A

400 450

mΩ

IGSS

IDSS

VSDF

Gate-Source Leakage Current

Drain-Source Leakage Current

Diode forward voltage

VGS= ±30V;VDS= 0V

VDS= 600V; VGS= 0V；TJ=25℃

TJ=125℃

ISD=11A, VGS = 0 V

±0.1 μA

1

100

μA

1.5

V

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