IRL540N(V2) View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

IRL540N
(Rev.:V2)

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRL540N，IIRL540N

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID =250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID =250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=18A

IGSS

Gate-Source Leakage Current

VGS=±16V

IDSS

Drain-Source Leakage Current

VDS=100V; VGS= 0V

VSD

Diode forward voltage

IS=18A, VGS = 0V

MIN TYP MAX UNIT

100

V

1.0

2.0

V

0.044 Ω

±0.1 μA

25

μA

1.3

V

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