®
BU810
MEDIUM VOLTAGE NPN FAST-SWITCHING
DARLINGTON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN DARLINGTON
s LOW BASE-DRIVE REQUIREMENTS
s FAST SWITCHING SPEED
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s HORIZONTAL DEFLECTION FOR
) MONOCHROME TVs
t(s s GENERAL PURPOSE SWITCHING
uc DESCRIPTION
d The BU810 is a Multiepitaxial Planar NPN
ro Transistor in TO-220 package. It is intended for
P use in high frequency and efficency converters,
lete switching regulators and motor control.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Product(s) - Obso ABSOLUTE MAXIMUM RATINGS
te Symbol
Parameter
le VCBO Collector-Base Voltage (IE = 0)
so VCEO Collector-Emitter Voltage (IB = 0)
ObVEBO Emitter-Base Voltage (IC = 0)
R = 200 Ω
Value
600
400
5
Unit
V
V
V
IC
Collector Current
7
A
ICM Collector Peak Current
10
A
IB
Base Current
Ptot Total Power Dissipation at Tcase ≤ 25 oC
Tstg Storage Temperature
Tj
Junction Temperature
2
A
75
W
-65 to 150
oC
150
oC
December 2000
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