MS2208 View Datasheet(PDF) - Microsemi Corporation

Part Name

Description

MFG CO.

MS2208

RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION

Microsemi Corporation 

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATION

Features

• HERMETIC METAL/CERAMIC PACKAGE

• LOW THERMAL RESISTANCE

• 10:1 LOAD VSWR CAPABILITY

• BALLASTED OVERLAY GEOMETRY

• COMMON EMITTER CONFIGURATION

MS2208

DESCRIPTION:

THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR

SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS

INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS

CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE

WIDTHS, DUTY CYCLES AND TEMPERATURES.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

PDISS

IC

VCC

TJ

TSTG

Parameter

Power Dissipation* (TC≤100ºC)

Device Current *

Collector Supply Voltage*

Junction Temperature

Storage Temperature

Thermal Data

RTH(J-C)

Junction - Case Thermal Resistance

*Applies only to rated RF amplifier operation

Value

1360

27

55

250

-65 to +200

0.11

Unit

W

A

V

°C

°C

°C/W

MSC0926.PDF 10-09-98

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