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BFX87 View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
MFG CO.
BFX87
NJSEMI
New Jersey Semiconductor 
BFX87 Datasheet PDF : 3 Pages
1 2 3
BFX87
BFX88
DC current gain
-lC=1.0mA;-VCE = 10V
-IC = 10mA;-VCE = 10V
-IG = 150mA;-VCE = iov
hFE
hFE
hFE
.
typ'
^
pn-
.„
1Q5
^
jo
-IC = 500mA;-VCE = 10V
Collector-emitter saturation voltage
-IC = 150mA;-IB = 15mA
Base-emitter saturation voltage
-lc=30mA;-lB=1.0mA
hFE
^
Jjj
Q 15
v
-VcE(sat) max.
Q'AQ
v
„ ^^
y
-VBE(sat) max.
0^90
V
-lc = 150mA; -1B = 15mA
-VBE(sat) ^
\^
Co I lector capacitance
-VCB-10V;lE = le = 0;f=1.0MHZ
Rn
Cc
^
Emitter capacitance
8
-VEB-2.0V;lc=lc=0;f=1.0MHz
Ce
°
Transition frequency
-lc=50mA;-VCE = 10V;f=100MHz;
'amb~25 c
TT
typ.
360
Saturated switching times
25
Turnntime
'°n
max.
60
_Turn-of„f t.i.me
t0ff
DTT
tm'yrpa.x.
55
150
h-parameters
Measured at -lc = 10 mA; -VCE = 10 V; f = 1.0 kHz; Tamb = 25 °C
Input impedance
hje
typ,
600
Voltage feedback ratio
hre
typ. 1.50x10'4
Forward current transfer ratio
hfe
typ.
155
Output admittance
hoe
typ.
104
^
F
^
p
MHz
n
n!
ns
ns
SI
/Jmho

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