C35B View Datasheet(PDF) - Digitron Semiconductors

Part Name

Description

MFG CO.

C35B

SILICON CONTROLLED RECTIFIERS

Digitron Semiconductors 

DIGITRON SEMICONDUCTORS

C35 SERIES

SILICON CONTROLLED RECTIFIERS

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Peak reverse or forward blocking current

(VD = Rated VDRM, TC = 125°C)

(VR = Rated VRRM, TC = 125°C)

C35U,F, A, G

C35B

C35H

C35C

C35D

C35E

C35M

C35S

C35N

Average forward or reverse blocking current

(VD = Rated VDRM, TC = 125°C)

(VR = Rated VRRM, TC = 125°C)

C35U,F, A, G

C35B

C35H

C35C

C35D

C35E

C35M

C35S

C35N

Peak on-state voltage

(ITM = 50.3A peak, pulse width ≤ 1ms, duty cycle ≤ 2.0%)

Gate trigger current (continuous dc)

(VD = 12V, RL = 50Ω)

(VD = 12V, RL = 50Ω, TC = -65°C)

Gate trigger voltage (continuous dc)

(VD = 12V, RL = 50Ω, TC = -65°C to +125°C)

(VD = Rated VDRM, RL = 1000Ω, TC = 125°C)

Holding current

(VD = 24V, gate supply = 10V, 20Ω, 45µs minimum pulse width, IT = 0.5A)

Critical rate of rise of forward blocking voltage

(VD = Rated VDRM, TC = 125°C)

C35U, F, M, S, N

C35A, G, B, H

C35C, D, E

Symbol Min Typ. Max

-

-

IDRM or

-

IRRM

-

-

-

-

-

-

-

13

-

12

-

11

-

10

-

8

-

6

-

5

-

4.5

-

4

-

-

IDRM(AV)

-

or

IRRM(AV)

-

-

-

-

-

-

VTM

-

-

6.5

-

6

-

5.5

-

5

-

4

-

3

-

2.5

- 2.25

-

2

-

2

IGT

-

6

40

-

-

80

VGT

-

-

3

0.25 -

-

IH

-

- 100

dv/dt

10

-

-

20

-

-

25

-

-

Unit

mA

mA

Volts

mA

Volts

mA

V/µs

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20130129

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