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BT139 View Datasheet(PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Part Name
Description
MFG CO.
BT139
FOSHAN
Foshan Blue Rocket Electronics Co.,Ltd. 
BT139 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BT139
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
Non-repetitive peak on-state current
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
ITM=12A IG=0.2A
dIG/dt=0.2A/μs
Peak gate current
Peak gate voltages
Peak gate power
Average gate power
(Over any 20 ms period)
Junction Temperature
Storage Temperature Range
Thermal resistance junction to ambient
Thermal resistance junction to mounting base
符号
Symbol
VDRMTj=25)
IT(RMS)
ITSM(t=20ms)
ITSM(t=16.7ms)
I2t(t=10ms)
T2+G+
T2+G-
T2-G-
T2-G+
IGM
VGM
PGM
PG(AV)
Tj
Tstg
Rth(j-a)
Rth(j-b)
600E
600
数值
Rating
16
155
170
120
50
50
50
10
2.0
5.0
5.0
800E
800
0.5
125
-40150
60
1.2
单位
Unit
V
A
A
A
A2S
A/μS
A/μS
A/μS
A/μS
A
V
W
W
K/W
K/W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state current
Repetitive peak off-state
current
符号
Symbol
IGT
IL
IH
VT
VGT
ID
tgt
dVD/dt
测试条件
Test Conditions
T2+G+
VD=12V
IT=0.1A
T2+G-
T2-G-
T2-G+
T2+G+
VD=12V
IG=0.1A
T2+G-
T2-G-
T2-G+
VD=12V
IG=0.1A
IT=20A
VD=12V
IT=0.1A
VD=400V
Tj=125
IT=0.1A,
VD=VDRM(max) Tj=125
ITM=20A VD=VDRM(max) IG=0.1A
dIg/dt=5A/μs
VDM=67% VDRM(MAX)
Tj=125
最小值
Min
0.25
典型值
Typ
2.5
4
5
11
1.2
0.7
0.4
0.1
2.0
最大值
Max
10
10
10
25
30
40
30
40
45
1.6
1.5
0.5
50
单位
Unit
mA
mA
mA
V
V
mA
μs
V/μs
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