BDT60F View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

MFG CO.

BDT60F

Silicon PNP Darlington Power Transistors

New Jersey Semiconductor 

Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF

ELECTRICAL CHARACTERISTICS

TC=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BDT60F ,

Collector-Emitter

VcEO(SUS) Sustaining Voltage

BDT60AF

BDT60BF

lc= -30mA; le= 0

BDT60CF

VcE(sat)

VeE(on)

ICBO

ICEO

Collector-Emitter Saturation Voltage lc=-1.5A;la=-6mA

Base-Emitter On Voltage

Collector Cutoff Current

Collector Cutoff Current

lc=-1.5A; VCE=-3V

VCB= -30V; IE= 0

VcB=1/2VcBo;lE=0;Tj=150°C

VCE= 1/2VGeo; le= 0

IEBO

hpE-1

Emitter Cutoff Current

DC Current Gain

VEB= -5V; lc= 0

lc=-0.5A;VCE=-3V

hpe-2

DC Current Gain

lc=-1.5A;VCE=-3V

hFE-3

VECF-!

DC Current Gain

C-E Diode Forward Voltage

lc= -4A ; VCE= -3V

IF=1.5A

VECF-2

C-E Diode Forward Voltage

Switching Times

IF=4A

ton

Turn-On Time

toff

Turn-Off Time

MIN TYP. MAX UNIT

-60

-80

V

-100

-120

-2.5 V

-2.5 V

-0.2

-1

mA

-0.2 mA

-5 mA

2000

750

250

2

V

2.1

V

0.3 1.5 u s

1.5 5.0 u s

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