TIP131 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
TIP131 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlington Power Transistor
TIP131
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.0V(Max)@ IC= 4A
·Complement to Type TIP136
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
IB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25℃
Collector Power Dissipation
@Ta=25℃
Tj
Junction Temperature
0.3
A
70
W
2
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.785 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W
SPTECH website：www.superic-tech.com
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