
13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
101
14 Typ. gate charge
V GS=f(Q gate); I D=3.7 A pulsed
parameter: V DD
10
BSR302N
9
25 °C
8
24 V
100 °C
7
125 °C
100
6
15 V
5
6V
4
3
2
10-1
100
101
102
t AV [µs]
1
0
103
0
2
4
6
8
10
Q gate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
16 Gate charge waveforms
36
V GS
Qg
34
32
30
V g s(th)
28
Q g(th)
26
-60
-20
20
60
100
140
T j [°C]
Q gs
Rev. 1.1
page 7
Q sw
Q gd
Q gate
2009-02-11