BC857AW View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
MFG CO.
BC857AW Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856W , 857W, 858W
SOT-323
Formed SMD Package
Marking
BC856W =3D
BC856AW =3A
BC856BW =3B
BC857W =3H
BC857AW =3E
BC857BW =3F
BC857CW =3G
BC858W =3M
General Purpose Switching and Amplification.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL BC856W
Collector Base Voltage
Collector Emitter Voltage
VCBO
80
VCEO
65
Emitter Base Voltage
VEBO
5
Collector Current (DC)
IC
Peak Collector Current
ICM
Peak Base Current
IBM
Power Dissipation upto Tamb=25ºC
*Ptot
Storage Temperature
Tstg
Junction Temperature
Tj
Operating Ambient Temperature
Tamb
BC857W
50
45
5
100
200
200
200
- 65 to +150
150
- 65 to +150
BC858W
30
30
5
UNITS
V
V
V
mA
mA
mA
mW
ºC
ºC
ºC
THERMAL RESISTANCE
From junction to ambient
*Rth (j-a)
625
K/W
*Sot-323 standard mounting condition
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Cut Off Current
ICBO
VCB=30V, IE=0
VCB=30V, IE=0, Tj=150 ºC
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
MIN TYP MAX UNITS
15
nA
4
µA
100 nA
BC856W_BC858W Rev170210E
Continental Device India Limited
Data Sheet
Page 1 of 4
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