2SC2577 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
2SC2577 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1102
APPLICATIONS
·Designed for audio power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
SPTECH website：www.superic-tech.com
2SC2577
1
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