2N6718G-A-T6C-B View Datasheet(PDF) - Unisonic Technologies
Part Name
Description
MFG CO.
2N6718G-A-T6C-B Datasheet PDF : 4 Pages
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2N6718
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current (Continue)
IC
1
A
Collector Current (Pulse)
IC
2
A
SOT-89
0.5
W
Total Power Dissipation
TO-126C
PD
1.6
W
Junction Temperature
Storage Temperature
TO-92
850
mW
TJ
+150
℃
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL TEST CONDITIONS MIN
Collector-Base Breakdown Voltage
BVCBO IC=100uA
100
Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA
100
Emitter-Base Breakdown Voltage
BVEBO IE=10μA
5
Collector-Emitter Saturation Voltage
VCE(SAT) IC=350mA, IB=35mA
Collector Cut-Off Current
ICBO VCB=80V
DC Current Gain
hFE1 VCE=1V, IC=50mA
80
hFE2 VCE=1V, IC=250mA
50
hFE3 VCE=1V, IC=500mA
20
Current Gain - Bandwidth Product
fT
VCE=10V, IC=50mA,
f=100MHz
50
Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note: Pulse test: PulseWidth≤380μs, Duty Cycle≤2%
CLASSIFICATION OF hFE2
RANK
RANGE
A
50~115
TYP MAX UNIT
V
V
V
350 mV
100 nA
300
MHz
20
pF
B
95~300
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-056.C
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