2N4907 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

MFG CO.

2N4907

Silicon PNP Power Transistors

New Jersey Semiconductor 

Silicon PNP Power Transistors

2N4907

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -200mA ; IB= 0

VcE(sat) Collector-Emitter Saturation Voltage lc= -4A; IB= -0.4A

VeE(sat) Base-Emitter Saturation Voltage

lc= -4A; IB= -0.4A

VBE(OII) Base-Emitter On Voltage

lc= -4A; VCE= -4V

ICEO

Collector Cutoff Current

ICBO

Collector Cutoff Current

'cex

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= -40V; IB= 0

1

Vca= -40V; IE= 0

VCE= -40V; VBE(off)= -1-5V

VCE= -40V; VBE(0fn= -1.5V, TC=150'C

VEB= -5V; lc= 0

hpE-1 DC Current Gain

|0= -4A; VCE= -4V

hFE-2

DC Current Gain

lc=-10A;VCE=-4V

fT

Current-Gain—Bandwidth Product

lc= -1A; VCE= -10V; ftest= 1.0MHz

MIN

MAX UNIT

-40

V

-0.75

V

-1.5

V

-1.5

V

-1.0

mA

-0.1

mA

-0.1

-2.0

mA

-1.0

mA

20

80

5

4

MHz

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