2N4907 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

MFG CO.

2N4907

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= -4A; IB= -0.4A

VBE(on) Base-Emitter On Voltage

IC= -4A; VCE= -4V

ICEO

Collector Cutoff Current

VCE= -40V; IB= 0

ICBO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB= -40V; IE= 0

VCE= -40V; VBE(off)= -1.5V

VCE= -40V; VBE(off)= -1.5V, TC=150℃

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -4A; VCE= -4V

hFE-2

DC Current Gain

IC= -10A; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -1A; VCE= -10V; ftest= 1.0MHz

2N4907

MIN MAX UNIT

-40

V

-0.75

V

-1.5

V

-1.5

V

-1.0

mA

-0.1

mA

-0.1

-2.0

mA

-1.0

mA

20

80

5

4

MHz

SPTECH website：www.superic-tech.com

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