2N4907 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2N4907

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2N4907

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= -4A; IB= -0.4A

VBE(on) Base-Emitter On Voltage

IC= -4A; VCE= -4V

ICEO

Collector Cutoff Current

VCE= -40V; IB= 0

ICBO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB= -40V; IE= 0

VCE= -40V; VBE(off)= -1.5V

VCE= -40V; VBE(off)= -1.5V, TC=150℃

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -4A; VCE= -4V

hFE-2

DC Current Gain

IC= -10A; VCE= -4V

fT

Current-Gain—Bandwidth Product IC= -1A; VCE= -10V; ftest= 1.0MHz

MIN MAX UNIT

-40

V

-0.75

V

-1.5

V

-1.5

V

-1.0

mA

-0.1

mA

-0.1

-2.0

mA

-1.0

mA

20

80

5

4

MHz

isc website：www.iscsemi.cn

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