2N4907 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2N4907

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2N4907

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= -0.75V(Max.)@ IC= -4A

·DC Current Gain-

: hFE= 20-80 @IC= -4A

APPLICATIONS

·Designed for general purpose use in power amplifier and

switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

IB

Base Current-Continuous

-4

A

PC

Collector Power Dissipation@TC=25℃

150

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

2.0 ℃/W

isc website：www.iscsemi.cn

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