2N2907AC3 View Datasheet(PDF) - TT Electronics.
Part Name
Description
MFG CO.
2N2907AC3 Datasheet PDF : 4 Pages
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SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907AC3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
Collector-Emitter
Breakdown Voltage
IC = -10mA
VCB = -60V
IB = 0
IE = 0
ICBO
Collector Cut-Off Current
VCB = -50V
IE = 0
TA = 150°C
IEBO
Emitter Cut-Off Current
VEB = -5V
VEB = -4V
IC = 0
IC = 0
ICES
Collector Cut-Off Current
VCE = -50V
VCE(sat)(1)
Collector-Emitter Saturation
Voltage
IC = -150mA
IC = -500mA
IB = -15mA
IB = -50mA
VBE(sat)(1)
Base-Emitter Saturation
Voltage
IC = -150mA
IC = -500mA
IB = -15mA
IB = -50mA
IC = -0.1mA
VCE = -10V
IC = -1.0mA
VCE = -10V
hFE(1)
Forward-current transfer
ratio
IC = -10mA
VCE = -10V
TA = -55°C
IC = -150mA VCE = -10V
IC = -500mA VCE = -10V
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
hfe
Small Signal Current Gain
Cobo
Output Capacitance
Cibo
Input Capacitance
ton
Turn-On Time
toff
Turn-Off Time
IC = -20mA
VCE = -20V
f = 100MHz
IC = -1.0mA
VCE = -10V
f = 1.0KHz
VCB = -10V
IE = 0
f = 1.0MHz
VEB = -2V
IC = 0
f = 1.0MHz
IC = -150mA VCC = -30V
IB1 = -15mA
IC = -150mA VCC = -30V
IB1 = - IB2 = -15mA
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Min.
-60
-0.6
75
100
100
50
100
50
Typ
Max. Units
V
-10
µA
-10
nA
-10
µA
-10
µA
-50
nA
-50
nA
-0.4
-1.6
V
-1.3
-2.6
450
300
2
100
8
pF
30
45
ns
300
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8357
Website: http://www.semelab-tt.com
Issue 1
Page 2 of 4
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