2N6107 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

MFG CO.

2N6107

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

2N6107

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -3A

VBE(on) Base-Emitter On Voltage

ICEX

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= -7A ; VCE= -4V

VCE= -80V; VBE(off)= -1.5V

VCE= -70V; VBE(off)= -1.5V; TC= 150℃

VCE= -60V;IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -2A ; VCE= -4V

hFE-2

DC Current Gain

IC= -7A ; VCE= -4V

COB

Output Capacitance

IE= 0 ; VCB= -10V; ftest= 1MHz

fT

Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -4V; ftest= 1MHz

MIN MAX UNIT

-70

V

-3.5

V

-3.0

V

-0.1

-2.0

mA

-1.0 mA

-1.0 mA

30

150

2.3

250

pF

10

MHz

SPTECH website：www.superic-tech.com

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