2N3714 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

2N3714

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2N3714

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A

VBE(sat) Base-Emitter Saturation Voltage

IC=5A; IB= 0.5A

VBE(on) Base-Emitter On Voltage

IC= 3A; VCE= 2V

hFE-1

DC Current Gain

IC= 1A; VCE= 2V

hFE-2

DC Current Gain

IC= 3A; VCE= 2V

fT

Current Gain-Bandwidth Product

*:Pulse test:Pulse width=300us,duty cycle≤2%

IC= 0.5A; VCE= 10V; f= 1.0MHz

MIN MAX UNIT

80

V

5

mA

1.0

V

2.0

V

1.5

V

25

90

15

4

MHz

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