2N5430 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
2N5430 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Contunuous Collector Current-IC= 7A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 7A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching and wide-band amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation@TC=25℃
40
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
4.37
UNIT
℃/W
2N5430
SPTECH website：www.superic-tech.com
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