2N4918 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
2N4918 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -40V(Min)
·Low Collector Saturatioin Voltage-
: VCE(sat)= -0.6V(Max.)@ IC= -1A
·Wide Area of Safe Operation
·Complement to Type 2N4921
APPLICATIONS
·Designed for driver circuits, switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
-3
A
IB
Collector Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 4.16 ℃/W
SPTECH website：www.superic-tech.com
2N4918
1
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