2N6496 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

MFG CO.

2N6496

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 8A; IB=0.8A

VBE(on) Base-Emitter On Voltage

IC= 8A; VCE= 2V

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE

DC Current Gain

IC= 8A; VCE= 2V

Switching times

tr

Rise Time

ts

Storage Time

VCC= 30V, IC= 8A , IB1= -IB2= 0.8A,

tf

Fall Time

2N6496

MIN MAX UNIT

110

V

1.0

V

2.0

V

1.6

V

50 mA

12 100

0.5 μs

1.5 μs

0.5 μs

SPTECH website：www.superic-tech.com

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