2N5301 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
2N5301 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.75V(Max.)@ IC= 10A
·Wide Area of Safe Operation
·Complement to Type 2N4398
APPLICATIONS
·Designed for use in power amplifier and switching circuits
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
30
A
IB
Base Current-Continuous
7.5
A
PC
Collector Power Dissipation@TC=25℃
200
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a Thermal Resistance,Junction to Ambient 34 ℃/W
Rth j-c Thermal Resistance,Junction to Case
0.875 ℃/W
2N5301
SPTECH website：www.superic-tech.com
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