SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Continuous Collector Current-IC= 4A
·Collector Power Dissipation-
: PC= 75W @TC= 25℃
APPLICATIONS
·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
90
V
VCEV
Collector-Emitter Voltage
90
V
VCER
Collector-Emitter Voltage
60
V
VCEO
Collector-Emitter Voltage
55
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
75
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
2.33
UNIT
℃/W
SPTECH website:www.superic-tech.com
2N3054A
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