2N4909 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

MFG CO.

2N4909

Silicon PNP Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= -0.75V(Max.)@ IC= -4A

·DC Current Gain-

: hFE= 20-80 @IC= -4A

APPLICATIONS

·Designed for general purpose use in power amplifier and

switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

IB

Base Current-Continuous

-4

A

PC

Collector Power Dissipation@TC=25℃

150

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

2.0 ℃/W

SPTECH website：www.superic-tech.com

2N4909

1

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