2N3234 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

MFG CO.

2N3234

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.2A

VBE(on) Base-Emitter On Voltage

IC= 3A; VCE= 10V

ICEV

Collector Cutoff Current

VCE= 160V; VBE(off)= 1.5V

IEBO

Emitter Cutoff Current

VEB= 7.0V; IC= 0

hFE

DC Current Gain

IC= 3A; VCE= 10V

fT

Current Gain-Bandwidth Product

IC= 0.5A; VCE= 4V; f= 1.0MHz

2N3234

MIN MAX UNIT

160

V

2.5

V

3.5

V

1

mA

5.0 mA

18

55

1.0

MHz

SPTECH website：www.superic-tech.com

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