2N6493 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
2N6493 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlingtion Power Transistor
2N6493
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A
VBE(sat) Base-Emitter Saturation voltage
IC= 10A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 4V
ICEO
Collector Cutoff current
VCE=100V; VBE (off)=-1.5V
IEBO
Emitter Cut-off current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2
DC Current Gain
IC= 15A ; VCE= 4V
MIN MAX UNIT
70
V
3.0
V
4.0
V
2.8
V
0.5
mA
3
mA
500
100
SPTECH website：www.superic-tech.com
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