2N4906 View Datasheet(PDF) - Unspecified

Part Name

Description

MFG CO.

2N4906

Silicon PNP Power Transistors

Unspecified 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistors

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A

VBE(on) Base-Emitter On Voltage

IC= -2.5A; VCE= -2V

ICEO

Collector Cutoff Current

VCE= -80V; IB= 0

ICBO

Collector Cutoff Current

ICEV

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB= -80V; IE= 0

VCE= -80V; VBE(off)= -1.5V

VCE= -80V; VBE(off)= -1.5V, TC=150℃

VEB= -5V; IC= 0

hFE-1

DC Current Gain

IC= -2.5A; VCE= -2V

hFE-2

DC Current Gain

IC= -5A; VCE= -2V

fT

Current-Gain—Bandwidth Product IC= -1A; VCE= -10V; ftest= 1.0MHz

2N4906

MIN MAX UNIT

-80

V

-1.0

V

-1.5

V

-1.4

V

-1.0

mA

-0.1

mA

-0.1

-2.0

mA

-1.0

mA

25

100

7

4

MHz

SPTECH website：www.superic-tech.com

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