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AO4423 View Datasheet(PDF) - shenzhen wanhexing Electronics Co.,Ltd

Part Name
Description
MFG CO.
AO4423
WHXPCB
shenzhen wanhexing Electronics Co.,Ltd 
AO4423 Datasheet PDF : 5 Pages
1 2 3 4 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
万和兴电子有限公司 www.whxpcb.com
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
VDS=0V, VGS=±20V
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-15A
TJ=55°C
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-10V, ID=-15A
VGS=-6V, ID=-10A
Forward Transconductance
VDS=-5V, ID=-15A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-15A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.0,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
Min
-30
-1.5
-182
2.1
Typ
-2.1
5.1
7.4
5.9
7.5
48
-0.71
2527
583
397
4.3
47
8
14
12
8
54
87
26.1
12.3
Max Units
V
-1
µA
-5
±1
µA
±10 µA
-2.6 V
A
6.2
m
9
7.2 m
9.5 m
S
-1
V
-4.2 A
3033 pF
pF
556 pF
6.4
57 nC
nC
nC
ns
ns
ns
ns
32
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t10s junction to ambient thermal resistance rating.
Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008)
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev.11.0 June 2013
www.aosmd,com

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