AO3422 View Datasheet(PDF) - Kersemi Electronic Co., Ltd.
Part Name
Description
MFG CO.
AO3422 Datasheet PDF : 4 Pages
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Features
VDS (V) = 55V
ID = 2.1A (VGS = 4.5V)
RDS(ON) < 160mΩ (VGS = 4.5V)
RDS(ON) < 200mΩ (VGS = 2.5V)
AO3422
N-Channel Enhancement Mode Field Effect Transistor
TO-236
(SOT-23)
General Description
The AO3422 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product AO3422 is Pb-free (meets
ROHS & Sony 259 specifications). AO3422L is a
Green Product ordering option. AO3422 and
AO3422L are electrically identical.
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
55
±12
2.1
1.7
10
1.25
0.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
75
115
Maximum Junction-to-Lead C
Steady-State
RθJL
48
Max
100
150
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
2014-5-28
1
www.kersemi.com
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