SMD Type
Transistors
NPN Transistors
2SD1615A
■ Typical Characterisitics
GAIN BANDWIDTH PRODUCT vs.
EM ITTER CURRENT
1000
100
VEC = 2.0 V
500
50
200
OUTPUT CAPCITANCE vs.
COLLECTOR TO BASE VOLTAGE
IE = 0
f = 1.0 M HZ
100
50
20
10
5
2
1
0.01 0.02
0.05 0.1 0.2 0.5 1 2
IC – Collector Current – A
5 10
20
10
5
2
1
2
5 10 20
50 100
VCB – Collector to Base Voltage – V
SWITCHING TIM E vs.
COLLECTOR CURRENT
2
VCC
IC =
=101.0IBIV=
–10.IB2
VBE(off) = –2 to 3 V
PW = 2 µs
1
Duty Cycle ≤ 2 %
t st g
0.5
0.2
0.1
0.05
tf
t on
0.01 0.02 0.05 0.1 0.2
IC – Collector Current – A
0.5 1
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