PEMD10 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

MFG CO.

PEMD10

NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ

NXP Semiconductors. 

PEMD10; PUMD10

NPN/PNP resistor-equipped transistors;

R1 = 2.2 k, R2 = 47 k

Rev. 6 — 4 January 2012

Product data sheet

1. Product profile

1.1 General description

NPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic

packages.

Table 1. Product overview

Type number Package

NXP

JEITA

PEMD10

SOT666 -

PUMD10

SOT363 SC-88

PNP/PNP

NPN/NPN

Package

complement complement configuration

PEMB10

PUMB10

PEMH10

PUMH10

ultra small and flat lead

very small

1.2 Features and benefits

 100 mA output current capability

 Built-in bias resistors

 Simplifies circuit design

 Reduces component count

 Reduces pick and place costs

 AEC-Q101 qualified

1.3 Applications

 Low current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors in digital applications

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter

Conditions

Min Typ Max Unit

Per transistor; for the PNP transistor (TR2) with negative polarity

VCEO

IO

R1

collector-emitter voltage

output current

bias resistor 1 (input)

open base

-

-

50

V

-

-

100 mA

1.54 2.20 2.86 k

R2/R1

bias resistor ratio

17

21

26

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