NGD8201ANT4G(2016) View Datasheet(PDF) - Littelfuse, Inc
Part Name
Description
MFG CO.
NGD8201ANT4G Datasheet PDF : 8 Pages
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NGD8201AN
TYPICAL ELECTRICAL CHARACTERISTICS
45
VCE = 5 V
40
35
30
25
10000
1000
100
VCE = −24 V
20
15
TJ = 25°C
10
5
TJ = 175°C
TJ = −40°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VGE, GATE TO EMITTER VOLTAGE (V)
10
VCE = 200 V
1.0
0.1
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
2.50
2.25
2.00
Mean + 4 s
Mean
1.75
1.50
Mean − 4 s
1.25
1.00
0.75
0.50
0.25
0
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
10000
1000
100
10
1.0
0.1
0
Figure 9. Gate Threshold Voltage vs.
Temperature
Ciss
Coss
Crss
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
10
tfall
8
tdelay
6
VCC = 300 V
4
VGE = 5.0 V
RG = 1000 W
2
IC = 9.0 A
RL = 33 W
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
12
VCC = 300 V
10 VGE = 5.0 V
RG = 1000 W
8
IC = 9.0 A
L = 300 mH
6
4
tdelay
tfall
2
0
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time vs.
Temperature
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
6
December, 2016 − Rev. 12
Publication Order Number:
NGD8201AN/D
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