KTC3879 View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

MFG CO.

KTC3879

NPN Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

Production specification

NPN Silicon Epitaxial Planar Transistor

KTC3879

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0

35

V

Collector-emitter breakdown voltage V(BR)CEO IC=100μA,IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO IE=100μA,IC=0

4

V

Collector cut-off current

Emitter cut-off current

ICBO

VCB=35V,IE=0

IEBO

VEB=4V,IC=0

0.1 μA

1.0 μA

DC current gain

hFE

VCE=12V,IC=2mA

40

240

Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA

0.4 V

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

VBE(sat)

fT

Cob

IC=10mA, IB=1mA

1.0 V

VCE=10V, IC= 1mA

100

400 MHz

VCB=10V,IE=0,f=1MHz 1.4 2.0 3.2 pF

CLASSIFICATION OF hFE

Rank

R

Range

Marking

40-80

RR

O

70-140

RO

Y

120-240

RY

C110

Rev.A

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