IRF342 View Datasheet(PDF) - Unspecified
Part Name
Description
MFG CO.
IRF342 Datasheet PDF : 5 Pages
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IRF340-343/IRF740-743 T-39-13
MTM8N35/8N40
N-Channel Power MOSFETs
10A, 350V/400V
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Symbol
Characteristic
Min
Off Characteristics
V(BR)DSS
Drain-Source Breakdown Voltage1
MTM8N40
400
MTM8N35
350
IDSS
Zero Gate Voltage Drain Current
Max
0.25
2.5
IGSS
Gate-Body Leakage Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS(on)
Drain-Source On-Voltage2
RDS(on)
Static Drain-Source On-Resistance2
gfs
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (Tc=25℃, Figures 9,10)3
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
±500
2.0
4.5
1.5
4.0
2.2
5.3
4.4
0.55
3.0
1800
350
150
60
150
200
120
60
Notes
1. TJ=+25℃ to +150℃
2. Pulse test: Pulse width ≤80µs, Duty cycle≤1%
3. Switching time measurements performed on LEM TR-58 test equipment.
Unit
V
mA
mA
nA
V
V
V
V
V
Ω
S( )
pF
pF
pF
ns
ns
ns
ns
nC
Test Conditions
VGS=0V, ID=5.0mA
VDS=0.85 x Rated VDSS,
VGS=0V
VDS=0.85 x Rated VDSS,
VGS=0V, Tc=100℃
VGS=±20V, VDS=0V
ID=1.0mA, VDS=VGS
ID=1.0mA, VDS=VGS
Tc=100℃
VGS=10V; ID=4.0A
VGS=10V; ID=8.0A
VGS=10V, ID=4.0A
Tc=100℃
VGS=10V, ID=4.0A
VDS=10V, ID=4.0A
VDS=25V, VGS=0V
F=1.0MHz
VDD=25V, ID=4.0A
VGS=10V, RGEN=50 Ω
RGS=50 Ω
VGS=10V, ID=12A
VDD=400V
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