DF75435 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

MFG CO.

DF75435

Fast Recovery Diode

Dynex Semiconductor 

500

Measured under pulse

conditions

400

Tj = 25˚C

300

Tj = 150˚C

200

100

0

1.0

1.25

1.5

1.75

2.0

Instantaneous forward voltage VF - (V)

Fig.2 Maximum (limit) forward characteristics

500

VFR

400

δy

300

δx

Current

waveform

Voltage

waveform

di = δy

dt δx

200

Tj = 125˚C limit

Tj = 25˚C limit

100

0

0

500

1000

1500

2000

2500

Rate of rise of forward current dIF/dt - (A/µs)

Fig.3 Transient forward voltage vs rate of rise of forward current

DF754

5/9

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