FPN530 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
FPN530 Datasheet PDF : 4 Pages
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Typical Characteristics
NPN Low Saturation Transistor
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.6
β = 10
1.4
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
0.6
25°C
0.4
125°C
0.2
- 40°C
0
0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Current Gain vs Collector Current
800
Vce = 2.0V
700
125°C
600
500
400
25°C
300
- 40°C
200
100
0
0.0001 0.001
0.01
0.1
1
10
IC - COLLECTOR CURRENT (A)
Base-Emitter On Voltage vs
Collector Current
1.4
Vce = 2.0V
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.0001 0.001
0.01
0.1
1
10
I C - COLLECTOR CURRENT (A)
Input/Output Capacitance vs
Reverse Bias Voltage
450
400
f = 1.0MHz
Cibo
350
300
250
200
150
Cobo
100
50
0
0.1
0.5 1
10 20 50 100
V CE - COLLECTOR VOLTAGE (V)
Power Dissipation vs
Ambient Temperature
1
TO- 226
0.75
0.5
0.25
0
0
25
50
75 100 125 150
TEMPERATURE (°C)
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