BUT30V View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

BUT30V

NPN TRANSISTOR POWER MODULE

STMicroelectronics 

BUT30V

THERMAL DATA

Rthj-case

Rthc-h

Thermal Resistance Junction-case

Max

Thermal Resistance Case-heatsink With Conductive

Grease Applied

Max

0.5

0.05

oC/W

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

ICER

ICEV

Collector Cut-off

Current (RBE = 5 Ω)

Collector Cut-off

Current (VBE = -5V)

VCE = VCEV

VCE = VCEV

VCE = VCEV

VCE = VCEV

Tc = 100 oC

Tc = 100 oC

IEBO

VCEO(sus)*

hFE∗

Emitter Cut-off Current

(IC = 0)

Collector-Emitter

Sustaining Voltage

(IB = 0)

DC Current Gain

VEB = 5 V

IC = 0.2 A L = 25 mH

Vclamp = 125 V

IC = 100 A VCE = 5

VCE(sat)∗ Collector-Emitter

Saturation Voltage

IC = 50 A

IC = 50 A

IC = 100 A

IC = 100 A

IB = 2.5 A

IB = 2.5 A

IB = 10 A

IB = 10 A

Tc = 100 oC

Tc = 100 oC

VBE(sat)∗ Base-Emitter

Saturation Voltage

IC = 50 A

IC = 50 A

IC = 100 A

IC = 100 A

IB = 2.5 A

IB = 2.5 A

IB = 10 A

IB = 10 A

Tc = 100 oC

Tc = 100 oC

diC/dt Rate of Rise of

On-state Collector

VCC = 300 V RC = 0 tp = 3 µs

IB1 = 15 A

Tc = 100 oC

VCE(3 µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V RC = 1 Ω

IB1 = 15 A

Tc = 100 oC

VCE(5 µs) Collector-Emitter

Dynamic Voltage

VCC = 300 V RC = 1 Ω

IB1 = 15 A

Tc = 100 oC

ts

Storage Time

tf

Fall Time

tc

Cross-over Time

IC = 100 A

VCC = 90 V

VBB = -5 V

RBB = 0.47 Ω

Vclamp = 125 V IB1 = 10 A

L = 45 µH

Tc = 100 oC

VCEW Maximum Collector

ICWoff = 150 A

Emitter Voltage

VBB = -5 V

Without Snubber

L = 30 µH

Tc = 125 oC

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

IB1 = 10 A

VCC = 90 V

RBB = 0.5 Ω

Min.

125

270

125

Typ.

27

0.45

0.55

0.7

0.9

1.15

1.1

1.45

1.55

350

2.7

2

1

0.1

0.2

Max.

1

5

1

4

1

0.9

1.2

0.9

1.5

1.4

1.4

1.8

1.9

3.5

2.5

2

0.2

0.35

Unit

mA

mA

mA

mA

mA

V

V

V

V

V

V

V

V

V

A/µs

V

V

µs

µs

µs

V

2/7

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