BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
WIN TYP MAX
Collector-emitter
BUV47
400
CEO(sus) sustaining V0|tage
lc = 200 mA 1 = 25 mH
(see Note 2)
450
Base-emitter
(BR)EBO breakdown voltage
IE = 50 mA lc = 0
(see Note 3)
7
30
Collector-emitter
CES cut-off current
'CER
Collector-emitter
cut-off current
'EBO
CE(sat)
BE(sat)
'
Cob
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
VCE = 850V
VCE = 1000V
VCE= 850V
VCE = 1 000 V
VCE= 850V
VCE = 1000V
VCE= 850V
VCE = 1 000 V
VBE = 0
V6E = 0
VBE = 0
VBE = 0
RBE = 10Q
RBE = 10n
RBE = 10n
RBE = 1 0 O
VEB = 5 V lc = 0
!;: 2.5 A I:: I"
TC = 125°C
Tc = 1 25"C
TC = 125°C
Tc = 1 25°C
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
^™»*««v
IB =
1 A lc = 5 A
(see Notes 3 and 4)
VCE =
VCB=
10V
20V
lc= 0.5A
lc = 0
f= 1 MHz
f = 0.1 MHz
0.15
0.15
1.5
1.5
0.4
0.4
3.0
3.0
1
1.5
3.0
1.6
8
105
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 us, duty cycle < 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
V
mA
mA
mA
V
V
MHz
PF
thermal characteristics
ReJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1 "C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS t
ton Turn on time
Is
Storage time
tf
Fall time
V - 150 V
(see Figures 1 and 2)
* Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1.0
us
3.0
us
0.8
us
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
tsv Voltage storage time ic = 5 A
If,
Current fall time
TC = 100°C
TEST CONDITIONS t
iB(0n) = i A
vBE(off) = -5V
(see Figures 3 and 4)
MIN TYP MAX UNIT
4.0
us
0.4
us