BU323Z View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

BU323Z

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

BU323Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC=7A, IB= 0

VCE(sat)1 Collector-Emitter Saturation Voltage IC= 7A ,IB= 70mA

VCE(sat)2 Collector-Emitter Saturation Voltage IC= 8A ,IB= 0.1A

VCE(sat)3 Collector-Emitter Saturation Voltage IC= 10A ,IB= 0.25A

VBE(sat)1 Base-Emitter Saturation Voltage

IC= 8A ,IB= 100mA

VBE(sat)2 Base-Emitter Saturation Voltage

IC= 10A ,IB= 0.25A

VBE(on)1 Base-Emitter On Voltage

IC= 5A ; VCE= 2V

VBE(on)2 Base-Emitter On Voltage

IC= 8A ; VCE= 5V

ICBO

Collector Cutoff Current

VCB=-350V, IE= 0

ICEO

Collector Cutoff Current

VCE=200V, IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 6.5A ; VCE= 1.5V

hFE-2

DC Current Gain

IC= 5.0A ; VCE=4.6V

MIN

MAX UNIT

350

V

1.6

V

1.8

V

1.7

V

2.2

V

2.5

V

2.1

V

2.3

V

100

μA

100

μA

50

mA

150

500

3400

isc website：www.iscsemi.com

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