BSP254A View Datasheet(PDF) - Philips Electronics

Part Name

Description

MFG CO.

BSP254A

P-channel enhancement mode vertical D-MOS transistor

Philips Electronics 

Philips Semiconductors

P-channel enhancement mode vertical

D-MOS transistor

Product specification

BSP254; BSP254A

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

−V(BR)DSS

drain-source breakdown voltage

−IDSS

drain-source leakage current

±IGSS

gate-source leakage current

−VGS(th)

gate-source threshold voltage

RDS(on)

drain-source on-resistance

 Yfs

transfer admittance

Ciss

input capacitance

Coss

output capacitance

Crss

feedback capacitance

ton

turn-on time

toff

turn-off time

Notes

1. Measured at f = 1 MHz; −VDS = 25 V; VGS = 0.

2. −VGS = 0 to 10 V; −ID = 250 mA; −VDD = 50 V.

CONDITIONS

−VGS = 0

−ID = 10 µA

−VDS = 200 V

VGS = 0

±VGS = 20 V

VDS = 0

VGS = VDS

−ID = 1 mA

−VGS = 10 V

−ID = 200 mA;

−VDS = 25 V

−ID = 200 mA

note 1

note 1

note 1

note 2

note 2

MIN. TYP. MAX. UNIT

250 −

−

V

−

−

1

µA

−

−

100 nA

0.8 −

2.8 V

−

10 15

Ω

100 200 −

mS

−

65 90

pF

−

20 30

pF

−

6

15

pF

−

5

10

ns

−

20 30

ns

handbook, halfpage

VDD = −50 V

0V

−10 V

50 Ω

ID

MBB689

Fig.3 Switching times test circuit.

April 1995

handbook, halfpage

INPUT

10 %

90 %

OUTPUT

90 %

ton

10 %

toff

MBB690

Fig.4 Input and output waveforms.

4

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