BSS52 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

MFG CO.

BSS52

NPN Darlington transistor

New Jersey Semiconductor 

NPN Darlington transistors

BSS50;BSS51;BSS52

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VCBO

collector-base voltage

BSS50

BSS51

BSS52

VCES

collector-emitter voltage

BSS50

BSS51

BSS52

VEBO

Ic

ICM

IB

Plot

emitter-base voltage

collector current (DC)

peak collector current

base current (DC)

total power dissipation

Tstg

Tj

Tannb

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

VBE = 0

open collector

Tamb<25°C

Tcase < 25 °C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

Rth j-c

thermal resistance from junction to ambient

thermal resistance from junction to case

CONDITIONS

in free air

MIN.

MAX.

UNIT

-

60

V

-

80

V

-

90

V

-

45

V

-

60

V

-

80

V

-

5

V

-

1

A

-

2

A

-

100

mA

-

0.8

W

-

5

W

-65

+150

°C

-

200

°C

-65

+150

°C

VALUE

220

35

UNIT

K/W

K/W

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