BSS51 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
BSS51 Datasheet PDF : 4 Pages
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20 STERN AVE,
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
TELEPHONE; (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
NPN Darlington transistors
BSS50; BSS51; BSS52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-39 metal package.
PNP complements: BSS61 and BSS62.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSS50
BSS51
BSS52
VCES
collector-emitter voltage
BSS50
BSS51
BSS52
Ic
collector current
Plot
total power dissipation
hFE
DC current gain
fj
transition frequency
CONDITIONS
MIN.
open emitter
-
-
-
VBE = 0
-
-
-
-
Tamb < 25 °C
-
Tcase < 25 °C
-
lc = 500mA;VCE = 10V
2000
lc = 500 mA; VCE = 5 V; f = 100MHz -
TYP.
-
-
_
-
-
-
-
-
-
-
200
MAX.
60
80
90
45
60
80
1
0.8
5
-
-
UNIT
V
V
V
V
V
V
A
W
W
MHz
N.I .Semi-C'nnduclors reserves the right In changetest conditions, parameter limits ;ind package dimensions without notice
lut'ormiition liinwhed by NJ Scmi-l unduclort i$ believed to he both accurate and reliable M the lime of guing to press. Ho-vevcr \
Scini-l onJutlors .bsmiics no re<.ptmsibility Cor my errors or oinissiiins discovered in its use NJ Seini-Loiidiivlurs tn
•.II-.K'iner. In vL-iir\b it diila^hvets ;ire Current hefrre plnciiia .
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