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BLU30/12 View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
MFG CO.
BLU30/12
NJSEMI
New Jersey Semiconductor 
BLU30/12 Datasheet PDF : 4 Pages
1 2 3 4
UHF power transistor
BLU30/12
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f > 1 MHz
Total power dissipation
f> 1 MHz; Tmb = 25 °C
Storage temperature
Operating junction temperature
VCBOM
VCEO
VEBO
Ic
ICM
Pto. (r.f.)
Tstg
Ti
max.
36 V
max. 16,5 V
max.
4V
max.
6A
max.
18 A
max.
65 W
-65 to +150 °C
max. 200 °C
MDA324
10
ss
^, \
, = 25 °
\ \t
(A)
Th
1
10
1Q2
VCE (v)
Fig.2 D.C. SOAR. Rth mb_h = 0,2 K/W
THERMAL RESISTANCE
(dissipation = 45 W; Tmb = 25 °C)
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
MDA32S
100
Plot
(W)
80 \,
\
XX
V 60
X
40
X v_
X
•>^v_ ^
•v^
I
"->>.
X\
\
20
^
0c
40
80
120
160
Th ("C)
I Cent nuous operation (f > 1 MHz)
II Short-time operation during mismatch; (f > 1 MHz.
F g.3 Power/temperature derating curves
Rthj-mb(r.f.) max. 2,45 KM
Rthmb-n
max. 0,2 K/W

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